Compound semiconductors on silicon

Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.

Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial het...

Compound Semiconductors

Hydrogen in compound semiconductors

Hydrogen can be inadvertently introduced at any of several steps in the fabrication of optoelectronic devices. The most common consequence of hydrogenation is the passivation of dopant impurities, which leads to a decrease in the electrical conductivity of the material. The most successfully applied experimental technique for directly determining the involvement of hydrogen has been infrared-ab...

Technology Roadmaps for Compound Semiconductors

The roles cited for compound semiconductors in public versions of existing technology roadmaps from the National Electronics Manufacturing Initiative, Inc., Optoelectronics Industry Development Association, Microelectronics Advanced Research Initiative on Optoelectronic Interconnects, and Optoelectronics Industry and Technology Development Association (OITDA) are discussed and compared within t...

Gunn Effect in Compound Semiconductors

A theoretical and experimental study of the Gunn effect is presented. It appears that this effect, originally observed by Gunn as a time variation in the current through ohmic samples of n-GaAs when the sample voltage exceeded a critical value, can be accounted for by the transferred electron model of Ridley and Watkins. This model is based on a transfer of electrons from a low-mass, high-mobil...